Optical gain of the 1.54 m emission in MBE-grown Si:Er nanolayers
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منابع مشابه
Microscopic structure of Er-related optically active centers in crystalline silicon.
A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as rega...
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In order to implement an integrated optical quantum circuit, designing waveguides based on the quantum box is of prime importance. To do this we have investigated optical waveguide both with and without optical pumping. The rate of absorption and emission using an array of AlGaAs/GaAs quantum box core/shell structure in the optical waveguide with various pumping intensities has computed. By con...
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Current-injected 1.54 m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped...
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Erbium ͑Er͒ codoping with oxygen ͑O͒ in Si is a well-known method for producing electroluminescent material radiating at 1.54 m through a 4f shell transition of Er 3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence ͑EL͒ of reverse biased Si:Er/O light-emitting diodes ͑LEDs͒, which give a strong room temperature 1.54 m intensity, is presented and discussed. ...
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